Flexible transistor active matrix array with all screen-printed electrodes

Flexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm 2 V -1 s -1 ), large on/off ratio (> 10 6 ) and low leakage current (~10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm 2 V -1 s -1 and on/off ratio larger than 10 4 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. Keyword: screen-printing, active matrix array, room temperature, parylene-C, DNTT